Imaging sensor and imaging device with column ADC

ABSTRACT

An imaging sensor comprising: an imaging chip in which a plurality of pixel are arranged in a matrix; and a signal processing chip that is each provided for one or more pixel columns or one or more pixel rows, has a device that performs signal processing on a pixel signal output from a pixel, and is stacked with the imaging chip is provided. For example, the device that performs signal processing is an A/D converter that converts a pixel signal output from the pixel into a digital signal, and when a pixel signal output from the pixel is converted into a digital signal, at least two or more A/D converters among the A/D converters are controlled in parallel.

This application is a continuation of U.S. application Ser. No.16/400,452 filed on May 1, 2019, which is a continuation of U.S.application Ser. No. 15/819,908 filed on Nov. 21, 2017, which is acontinuation of U.S. application Ser. No. 14/560,710 filed on Dec. 4,2014, which is based on and claims priority under 35 U.S.C. 119 fromJapanese Patent Application No. 2012-131232 filed on Jun. 8, 2012, andwhich is a continuation in part of PCT/JP2013/003533 filed on Jun. 5,2013. The contents of the above applications are incorporated in theirentirety herein by reference.

BACKGROUND 1. Technical Field

The present invention relates to an imaging sensor and an imagingdevice.

2. Related Art

Conventionally, an imaging sensor including a column-parallel A/Dconverter (simply referred to as an ADC) has been known. Also, ablock-parallel ADC has been proposed for an imaging sensor in whichsignal processing chip is stacked (please see for example Non-PatentDocument 1).

Non-Patent Document 1: “A Very Low Area ADC for 3-D Stacked CMOS ImageProcessing System” K. Kiyoyama et al., IEEE 3DIC 2012.

The column-parallel ADC is provided for each pixel column, and eachreads out a pixel signal of each pixel in a selected row in parallel.However, because a conventional column-parallel ADC is formed on thesame plane with an effective pixel area (for example, above and below inthe column direction of the effective pixel area), the area of theimaging sensor increases. Also, when a plurality of rows are subjectedto parallel/high speed processing, interconnections have to be routed inthe effective pixel area. Also, when the plurality of rows are subjectedto parallel/high speed processing, the size of an ADC becomes large, andthe area of the imaging sensor further increases.

On the other hand, a block-parallel ADC is provided for each block ofeffective pixels (for example, for each block of ten pixels×ten pixels).However, in order to read out each pixel in a block with a single ADC,devices such as to use a complicated control line or to arrange, on animaging chip side, a transistor for control become necessary. Also, anADC for each block respectively operates independently. For this reason,an ADC generates heat independently, and a signal processing chip maygenerate heat locally. Local heat generation in a signal processing chipis transmitted to a stacked imaging chip, and can influence operation ofthe imaging chip.

SUMMARY

Therefore, it is an object of an aspect of the innovations herein toprovide an imaging sensor and an imaging device, which are capable ofovercoming the above drawbacks accompanying the related art. The aboveand other objects can be achieved by combinations described in theclaims. That is, a first aspect of the present invention provides animaging sensor comprising: an imaging chip in which a plurality of pixelare arranged in a matrix; and a signal processing chip that is eachprovided for one or more pixel columns or one or more pixel rows, has adevice that performs signal processing on a pixel signal output from apixel, and is stacked with the imaging chip.

A second aspect of the present invention provides an imaging sensorcomprising: a pixel unit that has a plurality of areas that each includea plurality of pixels; a readout unit that is provided for each of theareas, and reads out signals from pixels of the area in the unit of thearea; and a signal processing unit that is stacked with the pixel unitand has a first signal processing circuit that performs signalprocessing on a signal from a first pixel of the area that is read outby the readout unit, and a second signal processing circuit thatperforms signal processing on a signal from a second pixel in the areathat is read out by the readout unit.

A third aspect of the present invention provides an imaging devicecomprising the imaging sensor.

The summary clause does not necessarily describe all necessary featuresof the embodiments of the present invention. The present invention mayalso be a sub-combination of the features described above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of an imaging sensor 100 according to thepresent embodiment.

FIG. 2 is a diagram for explaining a pixel array of an imaging chip 113,and a unit group 131.

FIG. 3 is an equivalent circuit schematic of a pixel 150.

FIG. 4 is a diagram that illustrates an arrangement example ofpluralities of pixels 150 and bumps 109 in the imaging chip 113.

FIG. 5 is a diagram that illustrates a plurality of ADCs 180 that arearranged on an ADC arrangement surface of a signal processing chip 111.

FIG. 6 is a diagram that illustrates another arrangement example ofpluralities of pixels 150 and bumps 109 in the imaging chip 113.

FIG. 7 is a diagram that illustrates an arrangement example ofpluralities of pixels 150 and TSVs 120 in the imaging chip 113.

FIG. 8 is a diagram that illustrates the plurality of ADCs 180 and theTSVs 120 that are arranged on the ADC arrangement surface of the signalprocessing chip 111.

FIG. 9 is a diagram that illustrates the general idea of the signalprocessing chip 111 having an analog CDS circuit 186, together with theimaging chip 113.

FIG. 10 is a timing chart that illustrates an operation example of thesignal processing chip 111 having the analog CDS circuit 186.

FIG. 11 is a diagram that illustrates the general idea of the signalprocessing chip 111 having a DDS circuit 188, together with the imagingchip 113.

FIG. 12 is a timing chart that illustrates an operation example of thesignal processing chip 111 having the DDS circuit 188.

FIG. 13 is a block diagram that illustrates the configuration of animaging device 500 according to the present embodiment.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, (some) embodiment(s) of the present invention will bedescribed. The embodiment(s) do(es) not limit the invention according tothe claims, and all the combinations of the features described in theembodiment(s) are not necessarily essential to means provided by aspectsof the invention.

FIG. 1 is a sectional view of an imaging sensor 100 according to thepresent embodiment. Although in the present example, a so-calledbackside illuminating type imaging sensor 100 is illustrated, theimaging sensor 100 is not limited to a backside illuminating type, butmay be a frontside illuminating type. The imaging sensor 100 only has tohave a structure including a stacked chip stacked with an imaging chip113.

The imaging sensor 100 in the present example includes the imaging chip113 that outputs a pixel signal corresponding to incident light, asignal processing chip 111 that processes a pixel signal and a memorychip 112 that stores a pixel signal. These imaging chip 113, signalprocessing chip 111 and memory chip 112 are stacked, and are connectedelectrically with each other via a plurality of conductive bumps 109that are Cu and the like. In the present example, the signal processingchip 111 and the memory chip 112 correspond to the above-mentionedstacked chips.

Note that, as illustrated, incident light is incident toward the Z-axispositive direction that is illustrated with an outlined arrow. In thepresent embodiment, the surface of the imaging chip 113 on whichincident light is incident is called the backside. Also, as indicatedwith coordinate axes, the rightward direction on the sheet that isorthogonal to the Z-axis is defined as the X-axis positive direction,and the front side direction on the sheet that is orthogonal to theZ-axis and the X-axis is defined as the Y-axis positive direction. Insome of the following figures, the coordinate axes are indicated suchthat the orientation of the respective figures can be known based on thecoordinate axes of FIG. 1.

One example of the imaging chip 113 is a backside illuminating type MOSimaging sensor. A PD layer 106 is disposed on the backside of aninterconnection layer 108. The PD layer 106 has a plurality ofphotoelectric converting units that generate electrical chargesaccording to light. The imaging chip 113 outputs pixel signals accordingto the electrical charges. The PD layer 106 in the present example has aplurality of PDs (photodiodes) 104 disposed two-dimensionally andtransistors 105 that are provided corresponding to the PDs 104. The PDs104 are one example of the photoelectric converting units.

Color filters 102 are provided, via a passivation film 103, on theincident light incidence side of the PD layer 106. There is a pluralityof types of the color filters 102 that allow passage of mutuallydifferent wavelength ranges, and the color filters 102 are particularlyarrayed corresponding to each of the PDs 104. The arrays of the colorfilters 102 are described below. A set of the color filter 102, the PD104, and the transistor 105 forms a single pixel.

A microlens 101 is provided on the incident light incidence side of thecolor filter 102 in correspondence with each pixel. The microlens 101condenses incident light toward the corresponding PD 104.

The interconnection layer 108 has an interconnection 107 that transmitsa pixel signal from the PD layer 106 to the signal processing chip 111.The interconnection 107 may have a multilayer structure, or may beprovided with a passive element and an active element.

A plurality of the bumps 109 are disposed on a surface of theinterconnection layer 108. The plurality of bumps 109 are aligned with aplurality of the bumps 109 that are provided on an opposing surface ofthe signal processing chip 111, and the imaging chip 113 and the signalprocessing chip 111 are for example pressed against each other so thatthe aligned bumps 109 are bonded and connected electrically with eachother.

Similarly, a plurality of the bumps 109 are disposed on mutuallyopposing surfaces of the signal processing chip 111 and the memory chip112. These bumps 109 are aligned with each other, and the signalprocessing chip 111 and the memory chip 112 are for example pressedagainst each other so that the aligned bumps 109 are bonded andconnected electrically with each other.

Note that the bonding between the bumps 109 is not limited to Cu bumpbonding by solid phase diffusion, but microbump joining by melting maybe employed. Also, a single or a plurality of bumps 109 may be providedto for example a single output interconnection described below. The sizeof the bumps 109 may be larger than the pitch of the PDs 104. Also, abump that is larger than the bump 109 corresponding to a pixel area inwhich pixels are arrayed may be provided as well in a peripheral areaother than the pixel area.

The signal processing chip 111 receives an analog pixel signal output bythe imaging chip 113. The signal processing chip 111 performspredetermined signal processing on the received pixel signal, andoutputs the pixel signal to the memory chip 112. The signal processingchip 111 is an example of a signal processing unit. The memory chip 112stores the signal received from the signal processing chip 111.

The signal processing chip 111 has a plurality of devices (or aplurality of signal processing circuits) that perform signal processingon a pixel signal output from a pixel. The signal processing chip 111 inthe present example has a plurality of ADCs 180 as one example of theplurality of devices (or the plurality of signal processing circuits).The plurality of devices may be devices that are different from the ADCs180, such as an arithmetic circuit. The respective ADCs 180 convertsanalog pixel signals output by the imaging chip 113 into digitalsignals. The signal processing chip 111 may perform predeterminedcomputation such as correction on the digital signals.

At least a part of the plurality of ADCs 180 are arrangedtwo-dimensionally on an ADC arrangement surface that is parallel with asurface on which a plurality of pixels are provided. For example, aplurality of pixels are arranged two-dimensionally in the row directionand the column direction in the imaging chip 113, and the plurality ofADCs 180 are arranged two-dimensionally in the row direction and thecolumn direction in the signal processing chip 111. The plurality ofADCs 180 are preferably arranged at constant intervals in the signalprocessing chip 111.

Also, at least two or more ADCs 180 among the plurality of ADCs 180arranged on the ADC arrangement surface are controlled in parallel, andoperate in parallel. To operate in parallel means that analog-digitalconversion processes in the plurality of ADCs 180 are performedsubstantially simultaneously. Thereby, the two or more ADCs 180 generateheat substantially simultaneously, and in comparison with a case wherethe plurality of ADCs 180 operate independently, fluctuation of atemperature distribution can be reduced. Note that all of the pluralityof ADCs 180 that are arranged on the ADC arrangement surface preferablyoperate substantially simultaneously. Thereby, a temperaturedistribution that results from heat generation of the ADCs 180 can bemade uniform. Also, the plurality of ADCs 180 may be arranged unevenlyon the ADC arrangement surface of the signal processing chip 111. Forexample, the plurality of ADCs 180 may be arranged more densely on theedge portions than at the center of the ADC arrangement surface of thesignal processing chip 111.

Also, the plurality of ADCs 180 may be arranged on a plurality of ADCarrangement surfaces that are positioned differently in the Z-axisdirection in the signal processing chip 111. That is, the signalprocessing chip 111 may be a multilayer chip, and the plurality of ADCs180 may be provided at different layers. In this case also, whenpositions where the plurality of ADCs 180 are arranged are projectedonto a single ADC arrangement surface, the respective ADCs 180 arepreferably arranged at constant intervals.

Also, the signal processing chip 111 has a TSV (through-silicon via) 110that connects between circuits provided on front and back surfacesrespectively. The TSV 110 is preferably provided in the peripheral area.Also, the TSV 110 may be provided also in the peripheral area of theimaging chip 113, and the memory chip 112.

FIG. 2 is a diagram for explaining a pixel array of the imaging chip113, and a unit group 131. In particular, FIG. 2 illustrates theappearance of the imaging chip 113 as observed from the backside. Theunit group 131 is an example of an area that has a plurality of pixels.Also, the imaging chip 113 is an example of a pixel unit that has aplurality of areas that each include a plurality of pixels. Pixels arearrayed to form a matrix along the row direction and the columndirection in the pixel area. In the present example, the x-axisdirection is defined as the row direction, and the y-axis direction isdefined as the column direction. In the present embodiment, adjacentfour pixels×four pixels, 16 pixels, form one group. The grid lines inFIG. 2 represent the concept that adjacent pixels are grouped to formthe unit group 131. Note that the unit group 131 is illustratedconceptually for explaining the positions of the ADCs 180 describedbelow, and the imaging chip 113 may not operate independently in theunit of the unit group 131.

As illustrated in the partially enlarged view of the pixel area, theunit group 131 includes, within its upper left, upper right, lower left,and lower right portions, four so-called Bayer arrays each including thefour pixels consisting of green pixels Gb, Gr, a blue pixel B, and a redpixel R. The green pixels Gb, Gr have green filters as the color filters102, and receive light in the green wavelength band of incident light.Similarly, the blue pixel B has a blue filter as the color filter 102,and receives light in the blue wavelength band, and the red pixel R hasa red filter as the color filter 102, and receives light in the redwavelength band.

FIG. 3 is an equivalent circuit schematic of a pixel 150. Each of aplurality of the pixels 150 has the PD 104, a transfer transistor 152, areset transistor 154, an amplifying transistor 156 and a selectingtransistor 158. At least a part of these transistors corresponds to thetransistor 105 in FIG. 1. Furthermore, a reset interconnection 300 towhich an ON signal of the reset transistor 154 is supplied, a transferinterconnection 302 to which an ON signal of the transfer transistor 152is supplied, a power supply interconnection 304 that receives powersupply from a power supply Vdd, a selecting interconnection 306 to whichan ON signal of the selecting transistor 158 is supplied, and an outputinterconnection 308 that outputs a pixel signal are disposed in thepixel 150. In the following, each transistor is explained as ann-channel type FET as an example, the type of the transistors is notlimited thereto.

The source, gate, and drain of the transfer transistor 152 are connectedone end of the PD 104, the transfer interconnection 302, and the gate ofthe amplifying transistor 156, respectively. Also, the drain and sourceof the reset transistor 154 are connected to the power supplyinterconnection 304, and the gate of the amplifying transistor 156,respectively. The drain and source of the amplifying transistor 156 areconnected to the power supply interconnection 304 and the drain of theselecting transistor 158, respectively. The gate and source of theselecting transistor 158 are connected to the selecting interconnection306, and the output interconnection 308, respectively. A load currentsource 309 supplies current to the output interconnection 308. That is,the output interconnection 308 for the selecting transistor 158 isformed by a source follower. Note that the load current source 309 maybe provided on the side of the imaging chip 113 or on the side of thesignal processing chip 111.

FIG. 4 is a diagram that illustrates an arrangement example of thepluralities of pixels 150 and bumps 109 in the imaging chip 113. Notethat the pixels 150 are the same with the pixel 150 illustrated in FIG.3, but are simplified in FIG. 4. As illustrated in FIG. 4, the pluralityof pixels 150 are arranged to form a matrix along the row direction andthe column direction. Note that the row direction and the columndirection refer to two different directions on a plane, and are notnecessarily orthogonal to each other. Note that in the present example,the plurality of pixels 150 is explained by being divided conceptuallyinto the unit group 131 including four pixels×four pixels. The pluralityof pixels 150 in the present example is divided into eight unit groupsincluding unit groups 131-1 to 131-8. Note that dotted lines indicatingthe unit groups 131-3 to 131-7 are omitted.

The pixels 150 provided along the respective columns are connected tothe common output interconnections 308. Also, the imaging chip 113 has avertical decoder 170 that reads out pixel signals from the plurality ofpixels 150 on a row-by-row basis. The pixels 150 provided along therespective rows are connected to the common control interconnections,and pixel signal of the pixels 150 are read out according to controlsignals from the vertical decoder 170. Pixel signals that are read outfrom the respective pixels 150 in a selected row are transmitted inparallel via the corresponding output interconnections 308 and bumps109, and are input to the corresponding ADCs 180 provided in the signalprocessing chip 111. The vertical decoder 170 is one example of acontrol unit that operates the two or more ADCs 180 in parallel.

FIG. 5 is a diagram that illustrates the plurality of ADCs 180 that arearranged on the ADC arrangement surface of the signal processing chip111. Note that FIG. 5 illustrates an area onto which the plurality ofunit groups 131 illustrated in FIG. 4 are projected. The respective ADCs180 are each provided in any one or more pixel columns. That is, therespective ADCs 180 are each provided in any one or more outputinterconnections 308. The respective ADCs 180 are connected to theplurality of pixels 150 in a corresponding column via the correspondingoutput interconnection 308. The plurality of ADCs 180 in the presentexample are provided in a one-to-one correspondence with the pluralityof output interconnections 308 in the pixel area. The respective ADCs180 receive pixel signals of the pixels 150 in a row that is selected bythe vertical decoder 170 among the pixels 150 that are connected to thecorresponding output interconnection 308, and convert the pixel signalsinto digital signals. Note that, when the respective ADCs 180 are eachconnected to the plurality of output interconnections 308, a device tobuffer pixel signals from the respective output interconnections 308,and sequentially input the pixel signals to the corresponding ADCs 180may be further provided to the signal processing chip 111.

Also, the respective ADCs 180 are arranged two-dimensionally on the ADCarrangement surface of the signal processing chip 111. Here, to bearranged two-dimensionally means that the ADCs 180 are arranged along atleast two directions, and the two directions do not have to beorthogonal to each other. The plurality of ADCs 180 in the presentexample are arranged at constant intervals in the row direction and thecolumn direction that are orthogonal to each other. Also, apredetermined number of the ADCs 180 may be each provided to therespective unit groups 131. One of the plurality of ADCs 180 in thepresent example is provided to each of the unit groups 131.

Note that the length of the respective ADCs 180 in the column directionis shorter than the length of a column of the pixel area in which theplurality of pixels 150 is provided. Also, the respective ADCs 180 mayhave a substantially square shape on the ADC arrangement surface. Whenthe respective ADCs 180 have such a shape, the flexibility of arrangingthe ADC 180 improves, and as illustrated in FIG. 5, the ADCs 180 can beeasily arranged uniformly on the ADC arrangement surface.

Because according to the imaging sensor 100 in the present example, therespective ADCs 180 are connected to the output interconnections 308 ofrespective columns, the respective ADCs 180 operate substantiallysimultaneous every time the vertical decoder 170 selects a given row. Inaddition, because the respective ADCs 180 are arranged uniformly on theADC arrangement surface of the signal processing chip 111, thetemperature distribution can be made uniform on the ADC arrangementsurface even when the respective ADCs 180 generate heat. For thisreason, fluctuation and the like of dark current of the plurality of PDs104 due to heat generation of the ADCs 180 can be reduced. Note thatthis effect becomes more noticeable when the number of the pixels 150 inthe imaging chip 113 is larger. Also, the imaging sensor 100 is notlimited to the one in which all the ADCs 180 on the ADC arrangementsurface operate simultaneously. As long as the two or more ADCs 180 onthe ADC arrangement surface operate simultaneously, the fluctuation ofthe temperature distribution can be reduced. For example, when thevertical decoder 170 selects a given row, pixel signals from all thepixels 150 in the row may not be read out simultaneously, but pixelsignal from the pixels 150 in the row may be read out in the unit of agroup each consisting of two or more pixels 150. In this case, pixelsignals from two or more pixels 150 in a group are read outsimultaneously, and the two or more corresponding ADCs 180 operatesimultaneously.

Note that when the unit group 131 has n pixels×n pixels, the pluralityof pixels 150 is divided into the n unit groups 131 in the columndirection. That is, the plurality of pixels 150 preferably has, in thecolumn direction, the unit groups 131 the number of which is the samewith the number of columns in the unit group 131. Each ADC 180 providedin the unit groups 131 lined up in the column direction is connected toany of the output interconnections 308 that corresponds to these unitgroups 131.

Also, the signal processing chip 111 can read out only pixel signals ofa part of the unit groups 131. That is, the signal processing chip 111may read out pixels signals from pixels in the unit of the unit group131. The signal processing chip 111 may provide a readout unit thatreads out a signal from a pixel, in the unit of the unit group 131. Forexample, when only pixel signals of the pixels 150 included in the unitgroup 131-1 are read out, first, pixel signals of the pixels 150 in thefirst row of the unit group 131-1 (the four pixels 150 in the presentexample) are read out. In this case, the corresponding four ADCs 180-1,180-2, 180-3, 180-4 convert the pixel signal of the respective pixels150 into digital signals simultaneously.

In other words, the first ADC 180-1 and the second ADC 180-2 thatprocess pixel signals from a first pixel 150 and a second pixel 150,respectively, in the unit group 131-1 are stacked in the pixel area.Also, the first ADC 180-1 is arranged at a position under an area of theunit group 131-1 having the above-mentioned first pixel 150 and secondpixel 150, and the second ADC 180-2 is arranged at a position not underthe area of the unit group 131-1.

Next, pixel signals of the pixels 150 in a second row in the unit group131-1 are read out. At this time also, the corresponding four ADCs 180-1to 180-4 convert the pixel signals from the respective pixels 150 intodigital signal simultaneously. Similarly, the four ADCs 180-1 to 180-4are used simultaneously to read out the pixels 150 in a third row and afourth row in the unit group 131-1 sequentially. After reading out fromthe pixels 150 in the last row in the unit group 131-1, the read-outtarget row returns to the first row, and the processing is repeated.

Because according to the present example, the plurality of ADCs 180arranged at different locations are used, the temperature increase dueto heat generation of the ADCs 180 can be made uniform within a surfaceeven when pixel signals of only the local pixels 150 included in theunit group 131 are read out.

Also, the respective ADCs 180 are connected to the corresponding outputinterconnections 308 via the bumps 109. The imaging sensor 100 in thepresent example has a single bump 109 for each ADC 180. The respectivebumps 109 are formed in areas of the same unit groups 131 with therespective ADCs 180. The respective bumps 109 may be providedimmediately below the output interconnections 308 which are to beconnected to the ADCs 180. For example, the bumps 109 are provided tothe respective output interconnections 308, and are arranged such thatthe positions of the bumps 109 in the column direction are displaced bypredetermined intervals for the respective output interconnections 308that are adjacent in the row direction. The predetermined intervals maybe equal to the length of the unit group 131 in the column direction.Also, the arrangement pattern of the bumps 109 may be repeated every nrows (note that n is the number of the pixels 150 included in the unitgroup 131 in the row direction).

Note that the respective ADCs 180 may be provided at the same relativepositions in the areas of the respective unit groups 131. In this case,the relative positions of the ADC 180 and the bump 109 may be differentamong the unit groups 131. The signal processing chip 111 has aninterconnection that connects the corresponding ADC 180 and bump 109.

FIG. 6 is a diagram that illustrates another arrangement example of thepluralities of pixels 150 and bumps 109 in the imaging chip 113.Although in the example illustrated in FIG. 4, a single bump 109 isprovided to a single output interconnection 308, a plurality of bumps109 is provided to a single output interconnection 308. In this case, aplurality of bumps 109 for a single output interconnection 308 may beprovided in areas of the different unit groups 131. The plurality ofbumps 109 connected to the single output interconnection 308 isconnected to a common ADC 180. That is, even when a plurality of bumps109 is provided to a single output interconnection 308, bumps 109 thatare connected to the same output interconnection 308 are connected tothe same ADC 180. In this case, the signal processing chip 111 has aninterconnection that connects the plurality of bumps 109 connected tothe same output interconnection 308 to the same ADC 180. Theinterconnection is formed across areas of a plurality of the unit groups131. Also, a part of the plurality of bumps 109 provided to the outputinterconnection 308 may be a dummy bump that is not connected to theoutput interconnection 308 and the ADC 180.

The plurality of bumps 109 in the present example are also preferablyarranged at constant intervals in the row direction and the columndirection. The row direction and the column direction are examples of afirst direction, and a second direction that crosses the firstdirection, and a plurality of pixels are arrayed in the first directionand the second direction. Also, as illustrated in FIG. 6, the pluralityof bumps 109 in each column may be arranged such that the positions inthe column direction are displaced by predetermined intervals for therespective output interconnections 308 that are adjacent in the rowdirection. As described above, by providing the plurality of bumps 109to each output interconnection 308, the number of support points betweenthe imaging chip 113 and the signal processing chip 111 can beincreased, and a warp of the chip can be prevented.

Note that a method to control readout of pixel signals in the imagingsensor 100 can be the same as that for a so-called column-parallelsensor. For this reason, pixel signals can be read out by the ADC 180provided to the signal processing chip 111 without using a complicatedcontrol line and the like. Also, the imaging sensor 100 can operate theplurality of ADCs 180 simultaneously even when the vertical decoder 170reads out any row. Also, the signal processing chip 111 may have ananalog CDS circuit or a DDS circuit (digital CDS circuit) that performscorrelated double sampling on pixel signals, and removes noises.

FIG. 7 is a diagram that illustrates an arrangement example ofpluralities of pixels 150 and TSVs 120 in the imaging chip 113. In thepresent example, the imaging chip 113 and the signal processing chip 111are electrically connected by the TSVs 120 in place of the bumps 109.The TSVs 120 are formed through the imaging chip 113 and the signalprocessing chip 111, and electrically connect the imaging chip 113 andthe signal processing chip 111. The output interconnection 308 and thevertical decoder 170 are the same as those in the illustrated in FIG. 4.

The pixels 150 that are provided along the respective rows are connectedto common control interconnections, and their pixel signals are read outaccording to control signals from the vertical decoder 170. The pixelsignals that are read out from the respective pixels 150 in the selectedrow are transmitted in parallel via the respectively correspondingoutput interconnections 308 and TSVs 120, and input to the respectivelycorresponding ADCs 180 that are provided in the signal processing chip111.

Note that the TSVs 120 are provided in the peripheral area other thanthe pixel area where pixels are arrayed. Although in the presentexample, the TSVs 120 are provided alternately on the upper side and thelower side of the pixel area every column, the array of the TSVs 120 isnot limited to the present example. All the TSVs 120 may be provided oneither of the upper side and the lower side of the pixel area, or may beprovided alternately on the upper side and the lower side of the pixelarea every two columns.

FIG. 8 is a diagram that illustrates the pluralities of ADCs 180 andTSVs 120 that are arranged on the ADC arrangement surface of the signalprocessing chip 111. The TSVs 120 that are indicated with the samereference numerals in FIG. 7 and FIG. 8 are electrically connected. Forexample, the respective TSVs 120 are formed continuously from theimaging chip 113 to the signal processing chip 111.

The arrangement of the ADCs 180 is the same with that illustrated inFIG. 5. The respective ADCs 180 are connected to the correspondingoutput interconnections 308 via the TSVs 120. The imaging sensor 100 inthe present example has a single TSV 120 for a respective ADC 180. Thearrangement of the TSVs 120 is the same with that in the imaging chip113 illustrated in FIG. 7. Note that although interconnections areformed to cross in FIG. 8, these interconnections are electricallyinsulated by a multilayer interconnection structure. As illustrated inFIG. 7 and FIG. 8, the plurality of ADCs 180 can be operated in paralleland the temperature increase can be made uniform even if the TSVs 120are used in place of the bumps 109.

FIG. 9 is a diagram that illustrates the general idea of the signalprocessing chip 111 having an analog CDS circuit 186, together with theimaging chip 113. Note that in FIG. 9, only two pixels×two pixels areillustrated as pixels in the imaging chip 113, and other pixels areomitted. Also, similarly in the signal processing chip 111, only twoADCs 180 are illustrated, and other ADCs 180 are omitted.

The signal processing chip 111 has the analog CDS circuits 186 for therespective ADCs 180. Operation of the analog CDS circuit 186 isdescribed below. Also, the signal processing chip 111 has a controlcircuit 184. The control circuit 184 may function as the above-mentionedreadout unit. The control circuit 184 includes a timing control unit, acomputing unit, a memory bus control unit, an interface, a power supplyunit, and the like. The control circuit 184 controls readout timing ofeach pixel 150 of the imaging chip 113 via the bump 109. The TSVs may beused in place of the bumps 109. Also, the control circuit 184 controlsoperation of the analog CDS circuit 186, the ADC 180, and a memory 182.The control circuit 184 transmits and receives a signal to/from theoutside of the imaging sensor 100, and supplies electrical power from apower supply and an operation clock to each circuit of the signalprocessing chip 111. Also, the control circuit 184 performspredetermined computation on a pixel signal and a digital signal.

FIG. 10 is a timing chart that illustrates an operation example of thesignal processing chip 111 having the analog CDS circuit 186. Thecontrol circuit 184 sets a selection signal S (N) for a pixel 150-N toan H level, and also supplies a reset pulse R to the pixel 150-N.Thereby, an output Out of the pixel 150-N becomes a reset level. Thecontrol circuit 184 outputs a signal Reset_Hold to control switching ofthe analog CDS circuit 186, and charges a capacitor of the analog CDScircuit 186 at the reset level.

Next, the control circuit 184 supplies a transfer pulse Tx (N) to thepixel 150-N. Thereby, the pixel 150-N outputs a pixel signal. Then, thecontrol circuit 184 outputs a signal Signal_Hold to control switching ofthe analog CDS circuit 186, and charges another capacitor of the analogCDS circuit 186 at a level of the pixel signal. Next, the controlcircuit 184 controls switching of the analog CDS circuit 186, and makesa subtracting circuit output the difference between voltages of the twocapacitors. A sample hold circuit of the analog CDS circuit 186 retainsa voltage value of the differential voltage output by the subtractingcircuit, and inputs the voltage value to the ADC 180. The ADC 180converts the differential voltage into a digital value. Such operationis performed on each pixel 150. Note that the operation is the same withconventional column-parallel sensors. In other words, because theimaging sensor 100 uses signal readout control in conventionalcolumn-parallel sensors as it is, and the plurality of ADCs 180 that arearranged in the signal processing chip 111 operate simultaneously, localheat generation in a chip can be prevented.

FIG. 11 is a diagram that illustrates the general idea of the signalprocessing chip 111 having a DDS circuit 188, together with the imagingchip 113. The signal processing chip 111 in the present example has theDDS circuit 188 in place of the analog CDS circuit 186, in contrast tothe signal processing chip 111 illustrated in FIG. 9.

FIG. 12 is a timing chart that illustrates an operation example of thesignal processing chip 111 having the DDS circuit 188. The controlcircuit 184 sets a selection signal S (N) for the pixel 150-N to an Hlevel, and also supplies a reset pulse R to the pixel 150-N. Thereby, anoutput Out of the pixel 150-N becomes a reset level. The control circuit184 outputs a pulse S/H that makes a sample hold circuit of the DDScircuit 188 retain the reset level. The sample hold circuit inputs thereset level to the ADC 180. The ADC 180 converts the reset level into adigital value.

Next, the control circuit 184 supplies a transfer pulse Tx (N) to thepixel 150-N. Thereby, the pixel 150-N outputs a pixel signal. Then, thecontrol circuit 184 outputs a pulse S/H that makes the sample holdcircuit of the DDS circuit 188 retain a level of the pixel signal. Thesample hold circuit inputs the level of the pixel signal to the ADC 180.The ADC 180 converts the level of the pixel signal into a digital value.The control circuit 184 calculates the difference between the digitalvalue of the reset level output by the ADC 180 and the digital value ofthe level of the pixel signal. Such operation is performed on each pixel150. Note that the operation is the same with conventionalcolumn-parallel sensors. In other words, because the imaging sensor 100uses signal readout control in conventional column-parallel sensors asit is, and the plurality of ADCs 180 that are arranged in the signalprocessing chip 111 operate simultaneously, local heat generation in achip can be prevented.

FIG. 13 is a block diagram that illustrates the configuration of animaging device 500 according to the present embodiment. An imagingdevice 500 includes an imaging lens 520 as an imaging optical system,and the imaging lens 520 guides a subject luminous flux that is incidentalong an optical axis OA to the imaging sensor 100. The imaging lens 520may be a replaceable lens that can be attached/detached to and from theimaging device 500. The imaging device 500 includes, mainly, the imagingsensor 100, a system control unit 501, a drive unit 502, a photometryunit 503, a work memory 504, a recording unit 505, and a display unit506.

The imaging lens 520 is configured with a plurality of optical lensgroups, and forms an image of a subject luminous flux from a scene nearits focal plane. Note that, in FIG. 13, the imaging lens 520 isrepresentatively shown with a single hypothetical lens that is placednear the pupil. The drive unit 502 is a control circuit that executeselectrical charge accumulation control such as timing control and areacontrol on the imaging sensor 100 according to instructions from thesystem control unit 501. In this sense, it can be said that the driveunit 502 serves functions of an imaging sensor control unit that makesthe imaging sensor 100 execute electrical charge accumulation and outputpixel signals. The drive unit 502 is combined with the imaging sensor100 to form an imaging unit. The control circuit to form the drive unit502 may be formed as a chip, and stacked with the imaging sensor 100.

The imaging sensor 100 passes pixel signals over to an image processingunit 511 of the system control unit 501. The imaging sensor 100 is thesame with the imaging sensor 100 that is explained with reference toFIG. 1 to FIG. 12. The image processing unit 511 performs various typesof image processing by using the work memory 504 as a workspace, andgenerates image data. For example, when a JPEG file format image data isgenerated, white balance processing, gamma processing, and the like areperformed, and then compression processing is executed. The generatedimage data is recorded in the recording unit 505 and converted intodisplay signals, and is displayed on the display unit 506 for a presetperiod of time.

The photometry unit 503 detects luminance distribution of a scene priorto an imaging sequence for generating image data. The photometry unit503 includes an AE sensor of approximately one million pixels, forexample. A computing unit 512 of the system control unit 501 calculatesluminance of respective areas within a scene, upon receiving an outputof the photometry unit 503. The computing unit 512 decides a shutterspeed, a diaphragm value, and an ISO speed according to the calculatedluminance distribution. Note that pixels used in the AE sensor may beprovided in the imaging sensor 100, and in this case, the photometryunit 503 separate from the imaging sensor 100 may not be provided.Because according to the imaging device 500 in the present example, theimaging sensor 100 in which local heat generation by the ADC 180 isreduced is used, image data in which fluctuation of dark current and thelike is reduced can be acquired.

While the embodiment(s) of the present invention has (have) beendescribed, the technical scope of the invention is not limited to theabove described embodiment(s). It is apparent to persons skilled in theart that various alterations and improvements can be added to theabove-described embodiment(s). It is also apparent from the scope of theclaims that the embodiments added with such alterations or improvementscan be included in the technical scope of the invention.

The operations, procedures, steps, and stages of each process performedby an apparatus, system, program, and method shown in the claims,embodiments, or diagrams can be performed in any order as long as theorder is not indicated by “prior to,” “before,” or the like and as longas the output from a previous process is not used in a later process.Even if the process flow is described using phrases such as “first” or“next” in the claims, embodiments, or diagrams, it does not necessarilymean that the process must be performed in this order.

What is claimed is:
 1. An imaging sensor in which a plurality ofsemiconductor substrates are stacked, the plurality of semiconductorsubstrates comprising: a first semiconductor substrate that has a pixelarea in which a plurality of pixels are arranged; and a secondsemiconductor substrate that includes a first converting unit thatconverts a signal read from a first pixel among the plurality of pixelsinto a digital signal, a second converting unit that converts a signalread from a second pixel among the plurality of pixels into a digitalsignal, and a third converting unit that converts a signal read from athird pixel among the plurality of pixels into a digital signal, whereinthe second pixel is arranged between the first pixel and the third pixelin a row direction, and the second converting unit is arranged betweenthe first converting unit and the third converting unit in a columndirection.
 2. The imaging sensor according to claim 1, wherein the firstconverting unit converts a signal read from a fourth pixel among theplurality of pixels into a digital signal, the second converting unitconverts a signal read from a fifth pixel among the plurality of pixelsinto a digital signal, the third converting unit converts a signal readfrom a sixth pixel among the plurality of pixels into a digital signal,and the fifth pixel is arranged between the fourth pixel and the sixthpixel in the row direction.
 3. The imaging sensor according to claim 2,wherein the first converting unit converts a signal read from a seventhpixel among the plurality of pixels into a digital signal, the secondconverting unit converts a signal read from an eighth pixel among theplurality of pixels into a digital signal, the third converting unitconverts a signal read from a ninth pixel among the plurality of pixelsinto a digital signal, and the eighth pixel is arranged between theseventh pixel and the ninth pixel in the row direction.
 4. The imagingsensor according to claim 3, wherein the fourth pixel is arrangedbetween the first pixel and the seventh pixel in the column direction,the fifth pixel is arranged between the second pixel and the eighthpixel in the column direction, and the sixth pixel is arranged betweenthe third pixel and the ninth pixel in the column direction.
 5. Theimaging sensor according to claim 4, wherein the first pixel, the secondpixel and the third pixel are arranged in a first area of the pixelarea, the fourth pixel, the fifth pixel and the sixth pixel are arrangedin a second area of the pixel area, the seventh pixel, the eighth pixeland the ninth pixel are arranged in a third area of the pixel area, andthe second area is arranged between the first area and the third area inthe column direction.
 6. An imaging device comprising the imaging sensoraccording to claim
 2. 7. The imaging sensor according to claim 1,wherein the second semiconductor substrate includes a fourth convertingunit that converts a signal read from a fourth pixel among the pluralityof pixels into a digital signal, an fifth converting unit that convertsa signal read from a fifth pixel among the plurality of pixels into adigital signal, and a sixth converting unit that converts a signal readfrom a sixth pixel among the plurality of pixels into a digital signal,the fifth pixel is arranged between the fourth pixel and the sixth pixelin the row direction, and the fifth converting unit is arranged betweenthe fourth converting unit and the six converting unit in the columndirection.
 8. The imaging sensor according to claim 7, wherein thesecond semiconductor substrate includes a seventh converting unit thatconverts a signal read from a seventh pixel among the plurality ofpixels into a digital signal, an eighth converting unit that converts asignal read from an eighth pixel among the plurality of pixels into adigital signal, and a ninth converting unit that converts a signal readfrom a ninth pixel among the plurality of pixels into a digital signal,the eighth pixel is arranged between the seventh pixel and the ninthpixel in the row direction, and the eighth converting unit is arrangedbetween the seventh converting unit and the ninth converting unit in thecolumn direction.
 9. The imaging sensor according to claim 8, whereinthe fourth converting unit is arranged between the first converting unitand the seventh converting unit in the row direction.
 10. The imagingsensor according to claim 9, wherein the fifth converting unit isarranged between the second converting unit and the eighth convertingunit in the row direction.
 11. The imaging sensor according to claim 10,wherein the sixth converting unit is arranged between the thirdconverting unit and the ninth converting unit in the row direction. 12.The imaging sensor according to claim 11, wherein the fourth pixel isarranged between the first pixel and the seventh pixel in the columndirection, the fifth pixel is arranged between the second pixel and theeighth pixel in the column direction, and the sixth pixel is arrangedbetween the third pixel and the ninth pixel in the column direction. 13.The imaging sensor according to claim 12, wherein the first pixel, thesecond pixel and the third pixel are arranged in a first area of thepixel area, the fourth pixel, the fifth pixel and the sixth pixel arearranged in a second area of the pixel area, the seventh pixel, theeighth pixel and the ninth pixel are arranged in a third area of thepixel area, and the second area is arranged between the first area andthe third area in the column direction.
 14. The imaging sensor accordingto claim 13, wherein the first converting unit, the fourth convertingunit and the seventh converting unit are arranged in an area thatoverlaps the first area in a stacked direction in which the firstsemiconductor substrate and the second semiconductor substrate arestacked, the second converting unit, the fifth converting unit and theeighth converting unit are arranged in an area that overlaps the secondarea in the stacked direction, and the third converting unit, the sixthconverting unit and the ninth converting unit are arranged in an areathat overlaps the third area in the stacked direction.
 15. An imagingdevice comprising the imaging sensor according to claim
 14. 16. Animaging device comprising the imaging sensor according to claim
 7. 17.An imaging device comprising the imaging sensor according to claim 1.18. The imaging sensor according to claim 5, wherein the firstconverting unit is arranged in an area that overlaps the first area in astacked direction in which the first semiconductor substrate and thesecond semiconductor substrate are stacked, the second converting unitis arranged in an area that overlaps the second area in the stackeddirection, and the third converting unit is arranged in an area thatoverlaps the third area in the stacked direction.
 19. An imaging devicecomprising the imaging sensor according to claim 18.